Nexperia PSMN2R7-30BL,118

Nexperia · FETs & Power MOSFETs · MPN PSMN2R7-30BL,118

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.15V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.954nF

Technical details

30V 100A 2.15V 170W 3mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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