Nexperia PSMN2R6-80YSFX

Nexperia · FETs & Power MOSFETs · MPN PSMN2R6-80YSFX

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)85nC@10V
Output Capacitance(Coss)1.385nF
Current - Continuous Drain(Id)231A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation294W
RDS(on)1.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)44pF
Number1 N-channel
Input Capacitance(Ciss)5.85nF
TypeN-Channel

Technical details

80V 231A 3V 294W 1.9mΩ@10V 1 N-channel N-Channel LFPAK-56E Single FETs, MOSFETs RoHS

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