Nexperia · FETs & Power MOSFETs · MPN PSMN2R6-80YSFX
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 85nC@10V |
| Output Capacitance(Coss) | 1.385nF |
| Current - Continuous Drain(Id) | 231A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 294W |
| RDS(on) | 1.9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.85nF |
| Type | N-Channel |
80V 231A 3V 294W 1.9mΩ@10V 1 N-channel N-Channel LFPAK-56E Single FETs, MOSFETs RoHS