Nexperia · FETs & Power MOSFETs · MPN PSMN2R6-60PSQ127
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 140nC@10V |
| Output Capacitance(Coss) | 968pF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 326W |
| Reverse Transfer Capacitance (Crss@Vds) | 591pF |
| RDS(on) | 2.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.629nF |
| Type | N-Channel |
60V 150A 4V 326W 2.6mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS