Nexperia · FETs & Power MOSFETs · MPN PSMN2R3-100SSEJ
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| Gate Charge(Qg) | 242nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 255A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 341W |
| RDS(on) | 2.28mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17.2nF |
100V 255A 2.6V 341W 2.28mΩ@10V 1 N-channel SOT-1235 Single FETs, MOSFETs RoHS