Nexperia · FETs & Power MOSFETs · MPN PSMN2R0-60PSRQ
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| Gate Charge(Qg) | 192nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 338W |
| Reverse Transfer Capacitance (Crss@Vds) | 835pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.5nF |
60V 120A 2V 338W 2.2mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS