Nexperia · FETs & Power MOSFETs · MPN PSMN2R0-60ES
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 137nC@10V |
| Output Capacitance(Coss) | 1.21nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 338W |
| RDS(on) | 2.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 594pF |
| Input Capacitance(Ciss) | 9.997nF |
| Type | N-Channel |
60V 120A 4V 338W 2.2mΩ@10V N-Channel Single FETs, MOSFETs RoHS