Nexperia · FETs & Power MOSFETs · MPN PSMN2R0-55YLHX
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| Gate Charge(Qg) | 84nC@4.5V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 986pF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 333W |
| Reverse Transfer Capacitance (Crss@Vds) | 542pF |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.353nF |
| Type | N-Channel |
55V 200A 2.2V 333W 2.1mΩ@10V 1 N-channel N-Channel LFPAK-56 Single FETs, MOSFETs RoHS