Nexperia PSMN2R0-55YLHX

Nexperia · FETs & Power MOSFETs · MPN PSMN2R0-55YLHX

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Specifications

Gate Charge(Qg)84nC@4.5V
Drain to Source Voltage55V
Output Capacitance(Coss)986pF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation333W
Reverse Transfer Capacitance (Crss@Vds)542pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.353nF
TypeN-Channel

Technical details

55V 200A 2.2V 333W 2.1mΩ@10V 1 N-channel N-Channel LFPAK-56 Single FETs, MOSFETs RoHS

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