Nexperia PSMN2R0-30YLE,115

Nexperia · FETs & Power MOSFETs · MPN PSMN2R0-30YLE,115

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.15V
Pd - Power Dissipation272W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.217nF

Technical details

30V 100A 2.15V 272W 2mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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