Nexperia · FETs & Power MOSFETs · MPN PSMN2R0-30YLDX
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 142W |
| Reverse Transfer Capacitance (Crss@Vds) | 453pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.157nF |
30V 100A 1.7V 142W 1 N-channel SOT-669 Single FETs, MOSFETs RoHS