Nexperia · FETs & Power MOSFETs · MPN PSMN1R9-40YSDX
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 194W |
| Reverse Transfer Capacitance (Crss@Vds) | 414pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.198nF |
40V 200A 2.4V 194W 1.9mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS