Nexperia PSMN1R8-40YLC,115

Nexperia · FETs & Power MOSFETs · MPN PSMN1R8-40YLC,115

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Specifications

Gate Charge(Qg)45nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.45V
Pd - Power Dissipation272W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)1.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.68nF

Technical details

N-Channel 40V 100A 272W LFPAK56(PowerSO-8)

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