Nexperia · FETs & Power MOSFETs · MPN PSMN1R8-30MLHX
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| Gate Charge(Qg) | 58nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.73V |
| Pd - Power Dissipation | 106W |
| Reverse Transfer Capacitance (Crss@Vds) | 401pF |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.125nF |
30V 150A 1.73V 106W 2.1mΩ@10V 1 N-channel SOT-1210 Single FETs, MOSFETs RoHS