Nexperia PSMN1R7-60BS,118

Nexperia · FETs & Power MOSFETs · MPN PSMN1R7-60BS,118

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Specifications

Gate Charge(Qg)137nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.21nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation306W
Reverse Transfer Capacitance (Crss@Vds)594pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.997nF
Vgs±20V

Technical details

N-Channel 60V 120A 306W Surface Mount D2PAK

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