Nexperia · FETs & Power MOSFETs · MPN PSMN1R7-25YLDX
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| Gate Charge(Qg) | 46.7nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 135W |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.415nF |
25V 200A 1.8V 135W 1.7mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS