Nexperia · FETs & Power MOSFETs · MPN PSMN1R6-30MLHX
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 106W |
| Reverse Transfer Capacitance (Crss@Vds) | 521pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.554nF |
30V 160A 1.6V 106W 1.9mΩ@10V 1 N-channel SOT-1210 Single FETs, MOSFETs RoHS