Nexperia PSMN1R5-50YLHX

Nexperia · FETs & Power MOSFETs · MPN PSMN1R5-50YLHX

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)181nC@10V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation333W
Reverse Transfer Capacitance (Crss@Vds)554pF
RDS(on)1.75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.143nF
TypeN-Channel

Technical details

N-Channel 50V 200A 333W Surface Mount LFPAK-56

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