Nexperia PSMN1R5-30YLC,115

Nexperia · FETs & Power MOSFETs · MPN PSMN1R5-30YLC,115

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation179W
RDS(on)1.55mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.044nF

Technical details

N-Channel 30V 179W LFPAK56(PowerSO-8)

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