Nexperia PSMN1R5-30BLEJ

Nexperia · FETs & Power MOSFETs · MPN PSMN1R5-30BLEJ

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Specifications

Gate Charge(Qg)228nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation401W
Reverse Transfer Capacitance (Crss@Vds)1.168nF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)14.934nF

Technical details

N-Channel 30V 120A 401W Surface Mount D2PAK

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