Nexperia · FETs & Power MOSFETs · MPN PSMN1R4-30YLDX
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| Gate Charge(Qg) | 27.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 166W |
| Reverse Transfer Capacitance (Crss@Vds) | 251pF |
| RDS(on) | 1.44mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.84nF |
N-Channel 30V 100A 166W LFPAK56(PowerSO-8)