Nexperia · FETs & Power MOSFETs · MPN PSMN1R4-100ASEJ
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| Output Capacitance(Coss) | 4.089nF |
|---|---|
| Pd - Power Dissipation | 935W |
| Configuration | - |
| Gate Charge(Qg) | 244nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.64V |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 1.07mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 18.588nF |
935W 100V 2.64V 1.07mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS