Nexperia · FETs & Power MOSFETs · MPN PSMN1R2-25YLDX
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| Gate Charge(Qg) | 60.3nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 230A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 172W |
| Reverse Transfer Capacitance (Crss@Vds) | 292pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.327nF |
25V 230A 1.2V 172W 1.2mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS