Nexperia PSMN1R1-80CSFJ

Nexperia · FETs & Power MOSFETs · MPN PSMN1R1-80CSFJ

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Specifications

Output Capacitance(Coss)4.261nF
Pd - Power Dissipation935W
Gate Charge(Qg)242nC
Configuration-
Drain to Source Voltage80V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)0.92mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)83pF
Number1 N-channel
Input Capacitance(Ciss)17.591nF

Technical details

935W 80V 3V 0.92mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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