Nexperia · FETs & Power MOSFETs · MPN PSMN1R1-40BS,118
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| Gate Charge(Qg) | 136nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 306W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.71nF |
N-Channel 40V 120A 306W Surface Mount D2PAK