Nexperia · FETs & Power MOSFETs · MPN PSMN1R1-25YLC,115
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| Gate Charge(Qg) | 83nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.95V |
| Pd - Power Dissipation | 215W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.287nF |
25V 100A 1.95V 215W 1.15mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS