Nexperia PSMN1R0-30YLC,115

Nexperia · FETs & Power MOSFETs · MPN PSMN1R0-30YLC,115

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Specifications

Gate Charge(Qg)103.5nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation272W
RDS(on)1.15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.645nF

Technical details

N-Channel 30V 100A 272W LFPAK56(PowerSO-8)

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