Nexperia · FETs & Power MOSFETs · MPN PSMN165-200K518
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| Gate Charge(Qg) | 16.5nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 2.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 165mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.33nF |
| Type | N-Channel |
200V 2.9A 4V 3.5W 165mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS