Nexperia · FETs & Power MOSFETs · MPN PSMN102-200Y,115
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| Drain to Source Voltage | 200V |
|---|---|
| Current - Continuous Drain(Id) | 21.5A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 113W |
| RDS(on) | 102mΩ@10V |
| Number | 1 N-channel |
200V 21.5A 4V 113W 102mΩ@10V 1 N-channel LFPAK-56-5 Single FETs, MOSFETs RoHS