Nexperia PSMN102-200Y,115

Nexperia · FETs & Power MOSFETs · MPN PSMN102-200Y,115

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Specifications

Drain to Source Voltage200V
Current - Continuous Drain(Id)21.5A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation113W
RDS(on)102mΩ@10V
Number1 N-channel

Technical details

200V 21.5A 4V 113W 102mΩ@10V 1 N-channel LFPAK-56-5 Single FETs, MOSFETs RoHS

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