Nexperia · FETs & Power MOSFETs · MPN PSMN0R9-30YLDX
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| Gate Charge(Qg) | 109nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 2.914nF |
| Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 291W |
| Reverse Transfer Capacitance (Crss@Vds) | 445pF |
| RDS(on) | 0.87mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.668nF |
| Type | N-Channel |
30V 300A 2.2V 291W 0.87mΩ@10V 1 N-channel N-Channel LFPAK-56-4 Single FETs, MOSFETs RoHS