Nexperia PSMN0R9-30ULDX

Nexperia · FETs & Power MOSFETs · MPN PSMN0R9-30ULDX

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Specifications

Gate Charge(Qg)109nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)445pF
RDS(on)0.87mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.668nF

Technical details

30V 300A 1.5V 227W 0.87mΩ@10V 1 N-channel LFPAK56E-4 Single FETs, MOSFETs RoHS

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