Nexperia · FETs & Power MOSFETs · MPN PSMN069-100YS,115
No reviews yet — be the first to review Nexperia PSMN069-100YS,115.
| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.7V |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 202.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
100V 17A 4.7V 56W 202.7mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS