Nexperia PSMN059-150Y,115

Nexperia · FETs & Power MOSFETs · MPN PSMN059-150Y,115

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Specifications

Gate Charge(Qg)27.9nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)43A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation113W
RDS(on)59mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.529nF

Technical details

N-Channel 150V 43A 113W LFPAK56(PowerSO-8)

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