Nexperia · FETs & Power MOSFETs · MPN PSMN057-200B,118
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| Gate Charge(Qg) | 96nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 39A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 57Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
200V 39A 4V 250W 57Ω@10V 1 N-channel TO-263-2 Single FETs, MOSFETs RoHS