Nexperia PSMN039-100YS,115

Nexperia · FETs & Power MOSFETs · MPN PSMN039-100YS,115

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)28.1A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)39.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.847nF

Technical details

N-Channel 100V 28.1A 74W LFPAK56(PowerSO-8)

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