Nexperia PSMN038-100YLX

Nexperia · FETs & Power MOSFETs · MPN PSMN038-100YLX

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Specifications

Gate Charge(Qg)21.6nC@5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation94.9W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)37.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.905nF

Technical details

N-Channel 100V 30A 94.9W LFPAK56(PowerSO-8)

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