Nexperia PSMN034-100BS,118

Nexperia · FETs & Power MOSFETs · MPN PSMN034-100BS,118

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Specifications

Gate Charge(Qg)23.8nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation86W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)34.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.201nF

Technical details

100V 32A 4V 86W 34.5mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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