Nexperia PSMN030-60YS,115

Nexperia · FETs & Power MOSFETs · MPN PSMN030-60YS,115

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation56W
RDS(on)24.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)686pF

Technical details

60V 29A 4V 56W 24.7mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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