Nexperia · FETs & Power MOSFETs · MPN PSMN028-100YS,115
No reviews yet — be the first to review Nexperia PSMN028-100YS,115.
| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 132pF |
| Current - Continuous Drain(Id) | 42A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 27.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.634nF |
| Type | N-Channel |
100V 42A 4V 89W 27.5mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS