Nexperia PSMN027-100BS,118

Nexperia · FETs & Power MOSFETs · MPN PSMN027-100BS,118

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)37A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation103W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)26.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.624nF

Technical details

100V 37A 4V 103W 26.8mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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