Nexperia PSMN021-100YLX

Nexperia · FETs & Power MOSFETs · MPN PSMN021-100YLX

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Specifications

Gate Charge(Qg)35.8nC@5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)49A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation147W
Reverse Transfer Capacitance (Crss@Vds)178pF
RDS(on)22mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)4.64nF

Technical details

100V 49A 2.1V 147W 22mΩ@5V 1 N-channel LFPAK-56-5 Single FETs, MOSFETs RoHS

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