Nexperia · FETs & Power MOSFETs · MPN PSMN020-100YS,115
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 43A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 106W |
| RDS(on) | 20.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.21nF |
100V 43A 4V 106W 20.5mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS