Nexperia · FETs & Power MOSFETs · MPN PSMN018-80YS,115
No reviews yet — be the first to review Nexperia PSMN018-80YS,115.
| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 89W |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.64nF |
80V 45A 4V 89W 18mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS