Nexperia PSMN018-100PSFQ

Nexperia · FETs & Power MOSFETs · MPN PSMN018-100PSFQ

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Specifications

Gate Charge(Qg)21.4nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)53A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation111W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.482nF

Technical details

100V 53A 3.2V 111W 18mΩ@10V 1 N-channel SOT-78 Single FETs, MOSFETs RoHS

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