Nexperia · FETs & Power MOSFETs · MPN PSMN018-100PSFQ
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| Gate Charge(Qg) | 21.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 53A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 111W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.482nF |
100V 53A 3.2V 111W 18mΩ@10V 1 N-channel SOT-78 Single FETs, MOSFETs RoHS