Nexperia PSMN017-80BS,118

Nexperia · FETs & Power MOSFETs · MPN PSMN017-80BS,118

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation103W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)17mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.573nF

Technical details

80V 50A 4V 103W 17mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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