Nexperia · FETs & Power MOSFETs · MPN PSMN016-100YS,115
No reviews yet — be the first to review Nexperia PSMN016-100YS,115.
| Gate Charge(Qg) | 54nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 51A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 117W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 16.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.744nF |
N-Channel 100V 51A 117W LFPAK56(PowerSO-8)