Nexperia PSMN015-100YSFX

Nexperia · FETs & Power MOSFETs · MPN PSMN015-100YSFX

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)36nC@10V
Output Capacitance(Coss)662pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation105W
RDS(on)15.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Input Capacitance(Ciss)2.234nF
TypeN-Channel

Technical details

100V 55A 4V 105W 15.5mΩ@10V N-Channel LFPAK56, Power-SO8 Single FETs, MOSFETs RoHS

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