Nexperia PSMN013-100YSEX

Nexperia · FETs & Power MOSFETs · MPN PSMN013-100YSEX

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation238W
Reverse Transfer Capacitance (Crss@Vds)192pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.775nF

Technical details

100V 58A 3V 238W 13mΩ@10V 1 N-channel LFPAK-56-5 Single FETs, MOSFETs RoHS

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