Nexperia PSMN012-100YSFX

Nexperia · FETs & Power MOSFETs · MPN PSMN012-100YSFX

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)837pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
RDS(on)11.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)53pF
Input Capacitance(Ciss)2.849nF
TypeN-Channel

Technical details

100V 65A 4V 130W 11.8mΩ@10V N-Channel LFPAK56, Power-SO8 Single FETs, MOSFETs RoHS

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