Nexperia PSMN011-100YSFX

Nexperia · FETs & Power MOSFETs · MPN PSMN011-100YSFX

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Specifications

Gate Charge(Qg)34.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)79.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation152W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)10.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.258nF

Technical details

100V 79.5A 3.1V 152W 10.9mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS

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