Nexperia · FETs & Power MOSFETs · MPN PSMN011-100YSFX
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| Gate Charge(Qg) | 34.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 79.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 152W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 10.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.258nF |
100V 79.5A 3.1V 152W 10.9mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS