Nexperia PSMN008-75B,118

Nexperia · FETs & Power MOSFETs · MPN PSMN008-75B,118

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Specifications

Gate Charge(Qg)122.8nC@10V
Drain to Source Voltage75V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.26nF

Technical details

75V 75A 4V 230W 8.5mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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