Nexperia PQMD16147

Nexperia · Transistors (BJTs) · MPN PQMD16147

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain-
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Resistor Ratio2.13
Number-
Pd - Power Dissipation350mW

Technical details

50V 100mA 350mW Single, Pre-Biased Bipolar Transistors RoHS

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